Active matrix display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasayuki Sakakura, Takeshi Noda, Hideaki Kuwabara, Shunpei Yamazaki
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasayuki Sakakura, Takeshi Noda, Hideaki Kuwabara, Shunpei Yamazaki
Estimating the term…
A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
An active matrix display device comprising a plurality of pixels arranged in matrix, each pixel comprising:
An active matrix display device comprising a plurality of pixels arranged in matrix, each pixel comprising:
Dependencies are inferred from the claim text.