Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant

A method of making a semiconductor device, comprising:

• providing a first semiconductor die or component;
• depositing an encapsulant over the first semiconductor die or component;
• forming a plurality of first conductive vias around the first semiconductor die or component;
• forming a recess in a first surface of the encapsulant over the first semiconductor die or component;
• forming a first interconnect structure over the first surface of the encapsulant, the first interconnect structure following a contour of the recess in the encapsulant;
• disposing a second semiconductor die or component in the recess with a plurality of first bumps formed on an active surface of the second semiconductor die or component bonded to a portion of the first interconnect structure formed in the recess;
• and
• disposing a third semiconductor die or component over the recess and second semiconductor die or component with a plurality of second bumps formed on an active surface of the third semiconductor die or component bonded to a portion of the first interconnect structure outside the recess.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die or component;
• depositing an encapsulant over the first semiconductor die or component;
• forming a recess in a first surface of the encapsulant over the first semiconductor die or component;
• forming a first interconnect structure over the first surface of the encapsulant, the first interconnect structure following a contour of the recess in the encapsulant;
• disposing a second semiconductor die or component in the recess with a plurality of first bumps formed on an active surface of the second semiconductor die or component contacting the first interconnect structure;
• and
• disposing a third semiconductor die or component over the recess and second semiconductor die or component with a plurality of second bumps formed on an active surface of the third semiconductor die or component contacting a portion of the first interconnect structure outside the recess.

A semiconductor device, comprising:

• a first semiconductor die or component;
• an encapsulant deposited over the first semiconductor die or component;
• a recess formed in a first surface of the encapsulant over the first semiconductor die or component;
• a first interconnect structure formed over the first surface of the encapsulant, the first interconnect structure following a contour of the recess in the encapsulant;
• a second semiconductor die or component disposed in the recess with a plurality of first bumps formed on an active surface of the second semiconductor die or component contacting the first interconnect structure;
• and
• a third semiconductor die or component disposed over the recess and second semiconductor die or component with a plurality of second bumps formed on an active surface of the third semiconductor die or component contacting a portion of the first interconnect structure outside the recess.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including an active surface;
• depositing an encapsulant over side surfaces and a back surface of the first semiconductor die opposite the active surface of the first semiconductor die or component;
• forming a recess in a first surface of the encapsulant over the first semiconductor die;
• forming a first interconnect structure over the first surface of the encapsulant and following a contour of the recess;
• and
• forming a second interconnect structure over a second surface of the encapsulant and first semiconductor die with contact pads formed on the active surface of the first semiconductor die or component contacting the second interconnect structure.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die;
• depositing an encapsulant over the first semiconductor die;
• forming a recess in a first surface of the encapsulant over the first semiconductor die;
• forming a first interconnect structure in the recess and over the first surface of the encapsulant;
• disposing a second semiconductor die in the recess;
• and
• disposing a third semiconductor die over the recess and second semiconductor die with a plurality of bumps formed on an active surface of the third semiconductor die contacting a portion of the first interconnect structure outside the recess.

A semiconductor device, comprising:

• a first semiconductor die;
• an encapsulant deposited over the first semiconductor die;
• a recess formed in the encapsulant over the first semiconductor die;
• a first interconnect structure formed in the recess and over the encapsulant;
• a second semiconductor die disposed in the recess;
• and
• a third semiconductor die disposed over the recess and second semiconductor die with a plurality of bumps formed on an active surface of the third semiconductor die contacting a portion of the first interconnect structure outside the recess.