Semiconductor device and a method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsYuki Koide, Masataka Minami
Life of this patent
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Abstract
A semiconductor device having redistribution interconnects in the WPP technology and improved reliability, wherein the redistribution interconnects have first patterns and second patterns which are electrically separated from each other within the plane of the semiconductor substrate, the first patterns electrically coupled to the multi-layer interconnects and the floating second patterns are coexistent within the plane of the semiconductor substrate, and the occupation ratio of the total of the first patterns and the second patterns within the plane of the semiconductor substrate, that is, the occupation ratio of the redistribution interconnects is 35 to 60%.
Claims9
A semiconductor device comprising:
- a multi-layer interconnect formed over a semiconductor substrate;
- a first interconnect portion formed in an uppermost layer of the multi-layer interconnect;
- a first insulating film formed over the first interconnect portion;
- a second insulating film formed over the first insulating film;
- a plurality of redistribution interconnects formed over the second insulating film;
- a third insulating film formed over the second insulating film and the redistribution interconnects;
- and
- a bump electrode formed over the third insulating film,
- wherein the redistribution interconnects include a first pattern and a second pattern which is electrically separated from the first pattern,
- wherein a first opening portion is formed in the first and second insulating films, and reaches at a part of the first interconnect portion,
- wherein a second opening portion is formed in the third insulating film and reaches at the first pattern,
- wherein the first pattern is electrically connected to the first interconnect portion via the first opening portion and is electrically connected to the bump electrode via the second opening portion,
- wherein the second pattern is electrically separated from the multi-layer interconnect and the bump electrode, and
- wherein a planar shape of the first pattern in the second opening portion is larger than a planar shape of the second pattern.
Dependencies are inferred from the claim text.