Semiconductor device including bottom surface wiring and manfacturing method of the semiconductor device
AssigneeLapis Semiconductor Co., Ltd.
InventorOsamu Kato
Life of this patent
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Abstract
Disclosed herein is a semiconductor device including a semiconductor substrate, a wiring layer formed above the semiconductor substrate, a through-hole electrode extending from the bottom surface of the semiconductor substrate to the wiring layer, a bottom surface wiring provided at the bottom surface of the semiconductor substrate such that the bottom surface wiring is connected to the through-hole electrode, and an external terminal connected to the bottom surface wiring. The bottom surface wiring has a greater film thickness than a film thickness of the through-hole electrode at least a portion of the bottom surface wiring including a connection part between the bottom surface wiring and the external terminal.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- a wiring layer formed above said semiconductor substrate;
- a through-hole electrode extending from a bottom surface of said semiconductor substrate to said wiring layer;
- a bottom surface wiring provided at the bottom surface of said semiconductor substrate such that said bottom surface wiring is connected to said through-hole electrode;
- an insulating film covering the bottom surface of said semiconductor substrate and said bottom surface wiring, the insulating film having an opening for a first portion of said bottom surface wiring;
- and
- an external terminal being connected to said bottom surface wiring at said first portion of said bottom surface wiring,
- wherein said first portion of said bottom surface wiring has a greater thickness than both of
- a thickness of a second portion of said bottom surface wiring, and
- a thickness of said through-hole electrode,
- wherein said external terminal extends from said first portion of said bottom surface wiring to a bottommost surface of said insulating film so as to be beneath the bottommost surface, and
- further wherein said external terminal covers all of said first portion.
A semiconductor device comprising:
- a semiconductor substrate;
- a wiring layer formed above said semiconductor substrate;
- a through-hole electrode extending from a bottom surface of said semiconductor substrate to said wiring layer;
- a bottom surface wiring provided at the bottom surface of said semiconductor substrate such that said bottom surface wiring is connected to said through-hole electrode;
- an insulating film covering the bottom surface of said semiconductor substrate and said bottom surface wiring, the insulating film having an opening for a first portion of said bottom surface wiring;
- and
- an external terminal that is separate from and not integral with all of the bottom surface wiring, the external terminal having a first surface touching said first portion and a second surface opposite the first surface, the first surface having a smaller length than that of the second surface, the length of the second surface further being greater than that of the first portion, said external terminal extending from said first portion of said bottom surface wiring to a bottommost surface of said insulating film,
- wherein said first portion of said bottom surface wiring has a greater thickness than both of
- a thickness of a second portion of said bottom surface wiring, and
- a thickness of said through-hole electrode.
Dependencies are inferred from the claim text.