Interconnection architecture for semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJaeman Yoon, Yungi Kim, Kangyoon Lee, Youngwoong Son
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AssigneeSamsung Electronics Co., Ltd.
InventorsJaeman Yoon, Yungi Kim, Kangyoon Lee, Youngwoong Son
Estimating the term…
An interconnection architecture, for a semiconductor device (having regions arranged to include at least an inner region, an intermediate region located at least aside the inner region, and an outer region located at least on a side of the intermediate region opposite to the inner region, includes: one or more pairs of first and second signal lines, each pair extending from the inner region into the intermediate region; first portions and second portions of the first and second signal lines being parallel, respectively, the first portions being located in the inner region; the first and second portion of at least the first signal line not being collinear; and an intra-pair line-spacing, d(i), for each pair including the following magnitudes, d2 in the inner region, and d2′ in the intermediate region, where d2<d2′.
An interconnection architecture for a semiconductor device having regions arranged to include at least an inner region, an intermediate region located at least aside the inner region, and an outer region located at least on a side of the intermediate region opposite to the inner region, the interconnection architecture comprising:
Dependencies are inferred from the claim text.