Interconnection structure and display device including interconnection structure
AssigneeKobe Steel, Ltd.
InventorsTakeaki Maeda, Hiroshi Goto, Yumi Iwanari, Takayuki Hirano
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Abstract
A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided.
Claims19
An interconnection structure including a layer of interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein
- (1) the semiconductor layer is composed of an oxide semiconductors;
- (2) the layer of interconnection film is connected directly to a transparent conductive film constituting a pixel electrode on the same plane where the layer of interconnection film is connected directly to the semiconductor layer;
- and
- (3) the layer of interconnection film is an Al alloy film containing at least one of Ni and Co and is connected directly to the semiconductor layer, the layer of interconnection film is a Cu alloy film and is connected directly to the semiconductor layer, or the layer of interconnection film is a Cu film and is connected directly to the semiconductor layer.
The interconnection structure including an insulating film, an interconnection film, and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein
- the semiconductor layer is composed of an oxide semiconductor,
- the interconnection film is a Cu alloy film and has a laminated structure including
- a first layer (Y) composed of a Cu alloy containing at least one element selected from the group consisting of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn in an amount of from 2 to 20 atomic % in total;
- and
- a second layer (X) composed of pure Cu or a Cu alloy containing Cu as a main component, which has an electrical resistivity lower than the first layer (Y),
- wherein the first layer (Y) is connected directly to the insulating film;
- and
- the second layer (X) is connected directly to the semiconductor layer.
Dependencies are inferred from the claim text.