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US 8,558,381 B2Granted
Semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorYoshihito Mizuno
Life of this patent
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Abstract
The present teachings provides a semiconductor device which has a semiconductor substrate, and a lower electrode including a first layer in contact with a lower surface of the semiconductor substrate, a second layer in contact with a lower surface of the first layer, and a third layer stacked at a position farther from the semiconductor substrate than the second layer, wherein the first layer is an aluminum layer containing silicon, the second layer is a layer including silicon as a primary component, and the third layer is a solder joint layer.
Claims2
A vertical semiconductor device comprising:
- a semiconductor substrate;
- and
- a lower electrode including a first layer in contact with a lower surface of the semiconductor substrate, a second layer in contact with a lower surface of the first layer, and a third layer stacked at a position farther from the semiconductor substrate than the second layer, wherein:
- the first layer is an aluminum layer containing silicon;
- the second layer is a layer including silicon;
- and
- the third layer is a solder joint layer.
4 more elements
Dependencies are inferred from the claim text.