Semiconductor device and method for manufacturing the same

A semiconductor device comprising a plurality of silicon films disposed on one plane and made of polysilicon containing an impurity,

• a crystal orientation of each of the silicon films is a (311) orientation,
• the device further comprising:
• a first interconnect layer formed of a plurality of first interconnects extending in a first direction parallel to a top surface of the silicon films;
• and
• a second interconnect layer formed of a plurality of second interconnects extending in a second direction intersecting the first direction,
• the first interconnect layer and the second interconnect layer being stacked alternately, and
• each of the silicon films being disposed between each of the first interconnects and each of the second interconnects.