Semiconductor integrated circuit device and process for manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsHiroyuki Uchiyama, Hiraku Chakihara, Teruhisa Ichise, Michimoto Kaminaga
Life of this patent
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AssigneeRenesas Electronics Corporation
InventorsHiroyuki Uchiyama, Hiraku Chakihara, Teruhisa Ichise, Michimoto Kaminaga
Estimating the term…
A semiconductor IC includes grooves formed in a substrate to define a first dummy region and second dummy regions formed at a scribing area, and third dummy regions and a fourth dummy region formed at a product area. A width of the first dummy region is greater than widths of each of the second and third dummy regions and a width of the fourth dummy region is greater than widths of each of the third dummy regions. A conductor pattern is formed over the first dummy region for optical pattern recognition. The first dummy region is formed under the conductor pattern so the grooves are not formed under the conductor pattern. The second dummy regions are spaced from one another by a predetermined spacing at the scribing area, and the third dummy regions are spaced from one another by a predetermined spacing at the product area.
A semiconductor device comprising:
Dependencies are inferred from the claim text.