Variable resistance memory device and methods of forming the same

A memory device, comprising:

• a first interlayer insulating layer disposed on a semiconductor substrate;
• a first electrode disposed in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction;
• a second interlayer insulating layer disposed on the first interlayer insulating layer;
• and
• a variable resistance pattern disposed on the second interlayer insulating layer, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode,
• wherein the area of contact between the first electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.