Small size and fully integrated power converter with magnetics on chip
AssigneeAnalog Devices, Inc.
InventorBaoxing Chen
Life of this patent
Estimating the term…
Abstract
An integrated circuit has a semiconductor die provided in a first IC layer and an inductor fabricated on a second IC layer. The inductor may have a winding and a magnetic core, which are oriented to conduct magnetic flux in a direction parallel to a surface of a semiconductor die. The semiconductor die may have active circuit components fabricated in a first layer of the die, provided under the inductor layer. The integrated circuit may include a flux conductor provided on a side of the die opposite the first layer. PCB connections to active elements on the semiconductor die may progress through the inductor layer as necessary.
Claims30
An integrated circuit, comprising:
- a semiconductor die having active circuit components fabricated in a first surface thereof,
- an inductor layer provided over the first surface of the semiconductor die, comprising an inductor with a magnetic core, a winding of the inductor oriented to conduct flux in a direction generally parallel to the first surface of the semiconductor die, and
- a flux conductor provided on a second surface of the semiconductor die opposite to the first surface.
An integrated circuit, comprising:
- a semiconductor die having active circuit components fabricated in a first surface thereof;
- an inductor layer provided over a first surface of the semiconductor die, the inductor layer comprising an inductor winding provided around a magnetic core, the winding of the inductor oriented to conduct flux in a direction generally parallel to the first surface of the semiconductor die, wherein the inductor is electrically connected to at least one active circuit component;
- and
- a flux conductor provided on a second surface of the semiconductor die opposite to the first surface.
An integrated circuit, comprising:
- a semiconductor die having active circuit components fabricated in a first surface thereon and having at least one through silicon via (TSV);
- and
- an inductor layer provided over a second surface of the semiconductor die opposite to the first surface, the inductor layer comprising an inductor winding provided around a magnetic core, the winding of the inductor oriented to conduct flux in a direction generally parallel to the first surface of the semiconductor die, wherein the inductor is electrically connected to at least one active circuit component in an electrical path that extends through the TSV;
- and
- a flux conductor provided on the second surface of the semiconductor die opposite to the first surface.
Dependencies are inferred from the claim text.