Semiconductor devices having nanochannels confined by nanometer-spaced electrodes

A semiconductor device, comprising:

• a bulk substrate;
• a first metal layer formed on the bulk substrate, the first metal layer comprising a first electrode;
• a nanochannel formed over the first metal layer, and extending in a longitudinal direction in parallel with a plane of the bulk substrate, the nanochannel having a cross-section defined by a width d and height h;
• a second metal layer formed over the nanochannel, the second metal layer comprising a second electrode,
• a first dielectric layer;
• a second dielectric layer;
• and
• a third dielectric layer;
• wherein a first side wall of the nanochannel is defined at least in part by a surface of the first dielectric layer,
• wherein a second side wall of the nanochannel is defined at least in part by a surface of the second dielectric layer;
• wherein a top wall of the nanochannel is defined at least in part by a surface of the second electrode and at least in part by a surface of the third dielectric layer, and
• wherein a bottom wall of the nanochannel is completely defined by a surface of the first electrode, wherein the surfaces of the first and second electrodes are spaced apart by h.