Back to results
US 8,558,325 B2Granted
Ruthenium for a dielectric containing a lanthanide
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
A gate containing ruthenium for a dielectric having an oxide containing a lanthanide and a method of fabricating such a combination gate and dielectric produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide gate may be formed on a lanthanide oxide. A ruthenium-based gate on a lanthanide oxide provides a gate structure that can effectively prevent a reaction between the gate and the lanthanide oxide.
Claims16
An electronic device comprising:
- a dielectric in an integrated circuit, the dielectric including an oxide region, the oxide region containing at least two different lanthanides of the lanthanide series of elements, each of the lanthanides configured throughout the oxide region;
- and
- a conductive material contacting the dielectric, the conductive material containing ruthenium.
An electronic device comprising:
- a memory in an integrated circuit, the memory having an array containing addressable elements, each addressable element including:
- a dielectric including an oxide region, the oxide region containing at least two different lanthanides of the lanthanide series of elements, each of the lanthanides configured throughout the oxide region;
- and
- a conductive material contacting the dielectric, the conductive material containing ruthenium.
1 more element
Dependencies are inferred from the claim text.