Composite dielectric thin film, capacitor and field effect transistor using the same, and each fabrication method thereof
AssigneeKorea Institute of Science and Technology
InventorsIl-Doo Kim, Dong-Hun Kim, Ho-Gi Kim, Nam-Gyu Cho
Life of this patent
Estimating the term…
Abstract
a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200° C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.
Claims6
A method for fabricating a composite dielectric thin film, the method comprising:
- preparing a ceramic target with a composition ratio of (dielectric)1-x-(filler)x(x=0.3˜0.6), which comprises a first phase consisting of the dielectric and a second phase consisting of the filler, and the first and second phases being mixed with each other and
- performing physical vapor deposition on the ceramic target at a room temperature or up to 200° C. to thereby obtain a partially nanocrystalline composite dielectric thin film on a substrate which is a plastic substrate, a glass substrate or a silicon substrate, with an insulating film formed thereon,
- wherein the composite dielectric thin film comprises a dielectric matrix which is amorphous and amorphous, with partially nanocrystalline, and insulating fillers which are crystalline and uniformly distributed within the dielectric matrix
- without performing further heat treatment, and wherein the dielectric contains Bi1.5Zn1.0Nb1.5O7 (BZN).
Dependencies are inferred from the claim text.