Semiconductor memory devices and methods of manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorLo-Yueh Lin
Life of this patent
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Abstract
A semiconductor memory device includes a substrate and a plurality of rows of memory cells. The substrate comprises a plurality of isolation structures and a plurality of active regions. Each of the active regions is spaced apart from another active region by one of the isolation structures. In a cross-section of the substrate between two rows of memory cells in a direction parallel to the two rows of memory cells, a maximum height of each isolation structure with respect to a bottom of the substrate is lower than or equal to minimum heights of active regions adjacent thereto.
Claims17
A semiconductor memory device comprising:
- a substrate having a first surface and a second surface spaced apart from the first surface, wherein the substrate comprises
- a plurality of isolation structures, wherein a height of the central portion of each of the isolation structures with respect to the second surface of the substrate is lower than a height of side portions of each of the isolation structures, and each of the isolation structures comprises a dielectric material;
- and
- a plurality of active regions, wherein each of the active regions is spaced apart from another active region by one of the isolation structures;
- and
- a plurality of rows of memory cells provided on the first surface of the substrate,
- wherein the semiconductor memory device comprises a substantially continuous and smooth surface between the top of each of the active regions and the side portion of the adjacent isolation structures, and
- in a cross-section of the substrate between two rows of memory cells in a direction parallel to the two rows of memory cells, a maximum height of each isolation structure with respect to the second surface of the substrate is lower than or equal to minimum heights of active regions adjacent thereto.
A semiconductor memory device comprising:
- a substrate having a first surface and a second surface spaced apart from the first surface, wherein the substrate comprises
- a plurality of isolation structures spaced apart in a first direction, wherein a height of the central portion of each of the isolation structures with respect to the second surface of the substrate is lower than a height of side portions of each of the isolation structures;
- and
- a plurality of active regions;
- and
- a plurality of rows of memory cells provided on the first surface of the substrate and are spaced apart in a second direction,
- wherein the semiconductor memory device comprises a substantially continuous and smooth surface between the top of each of the active regions and the side portion of the adjacent isolation structures, and
- in a cross-section of the substrate between two rows of memory cells in the first direction, a maximum height of each isolation structure with respect to the second surface of the substrate is lower than or equal to minimum heights of active regions adjacent thereto.
Dependencies are inferred from the claim text.