Trench isolation MOS P-N junction diode device and method for manufacturing the same

A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device (i-MOS Rectifier), comprising:

• a substrate;
• a first trench structure formed in the substrate;
• a second trench structure formed in the substrate, wherein the first trench structure and the second trench structure is capable of dividing the substrate into a plurality of surface portions and a first surface portion is located between the first trench structure and the second trench structure;
• a trench oxide layer formed on an inner surface of the first trench structure;
• a polysilicon layer filled in the first trench structure and formed on the trench oxide layer, but at a level lower than a surface of the substrate;
• a gate oxide layer formed on the first surface portion of the substrate;
• a gate structure formed on the gate oxide layer;
• a doped region formed under the first surface portion and outside the gate oxide layer and contacted to the trench oxide layer;
• and
• a metallic sputtering layer contacted to the gate structure, the polysilicon layer in the first trench structure and the doped region.