Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor

A method of manufacturing a semiconductor device, the method comprising:

• forming source zones of a first conductivity type and body contact zones of a second conductivity type, which is the opposite of the first conductivity type, in a semiconductor die, the source and body contact zones adjoining a first surface of the semiconductor die in first sections;
• depositing polycrystalline silicon to form polysilicon plugs extending through openings in a dielectric layer adjoining the first surface, the polysilicon plugs being electrically connected to the source and body contact zones;
• providing an impurity source in contact with the deposited polycrystalline silicon;
• and
• tempering the impurity source so that atoms of a metallic recombination element diffuse out from the impurity source into the semiconductor die and silicide crystallites are formed in the polysilicon plugs at a distance to the first surface.