Semiconductor device and method of forming the same
AssigneeElpida Memory, Inc.
InventorTakashi Shinhara
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate having a groove; a gate insulator; a first diffusion region; a gate electrode; a hydrogen-containing insulator; and a fluorine-containing insulator. The gate insulator covers inside surfaces of the groove. The first diffusion region is formed in the substrate. The first diffusion region has a first contact surface that contacts the gate insulator. The gate electrode is formed on the gate insulator and in the groove. The hydrogen-containing insulator is formed over the gate electrode and in the groove. The hydrogen-containing insulator is adjacent to the gate insulator. The fluorine-containing insulator is formed on the hydrogen-containing insulator and in the groove. The first contact surface includes Si—H bonds and Si—F bonds.
Claims20
A semiconductor device comprising:
- a semiconductor substrate including silicon and having a groove;
- a gate insulator covering inside surfaces of the groove;
- a first diffusion region in the substrate, the first diffusion region having a first contact surface that contacts the gate insulator;
- a gate electrode on the gate insulator and in the groove;
- a hydrogen-containing insulator over the gate electrode and in the groove, the hydrogen-containing insulator being adjacent to the gate insulator;
- and
- a fluorine-containing insulator on the hydrogen-containing insulator and in the groove,
- wherein the first contact surface includes Si—H bonds.
A semiconductor device comprising:
- an insulator;
- a silicon region having a contact surface that contacts the insulator;
- a hydrogen-containing insulator being adjacent to the insulator, the hydrogen-containing insulator being disposed in an opposite side of the insulator to the silicon region;
- and
- a fluorine-containing insulator being adjacent to the hydrogen-containing insulator, the fluorine-containing insulator being disposed in an opposite side of the hydrogen-containing insulator to the insulator,
- wherein the contact surface includes Si—H bonds.
A semiconductor device comprising:
- a silicon substrate having a groove, the semiconductor device including an active region and an isolation region which defines the active region, and the groove extending across the isolation region;
- a gate insulator covering bottom and side surfaces of the groove;
- a first diffusion region formed in the silicon substrate, the first diffusion region having a first contact surface that contacts the gate insulator;
- a second diffusion region formed in the silicon substrate, the second diffusion region being positioned in an opposite side of the groove to the first diffusion region, the second diffusion region having a second contact surface that contacts the gate insulator;
- a gate electrode formed on the gate insulator and in the groove;
- a hydrogen-containing insulator formed over the gate electrode and in the groove, the hydrogen-containing insulator extending along the gate insulator that covers the side surfaces;
- and
- a fluorine-containing insulator formed on the hydrogen-containing insulator and in the groove,
- wherein each of the first and second contact surfaces includes Si—H bonds.
Dependencies are inferred from the claim text.