MRAM cell structure

A memory cell structure, comprising:

• a memory stack having a bottom electrode and a top electrode;
• a conductive extender electrically connected to the bottom electrode and having an extending portion laterally extending from the memory stack, the memory stack formed on a main portion of the conductive extender;
• a data control line configured to control a memory state of the memory stack formed directly under the memory stack and the main portion of the conductive extender;
• an under-metal layer formed under the extending portion and electrically coupled to a switching device configured to read the memory state of the memory stack;
• and
• a via structure directly connecting the extending portion to the under-metal layer, and formed directly and laterally adjacent to the data control line, wherein the via structure comprises a first via directly connected to the under-metal layer, and a third via formed directly on the first via and connected to the extending portion;
• and
• a second via outside of a unit cell, the second via located in a same metal level as the first via and providing a connection path between a fourth metal layer and a third metal.

A method of manufacturing a magnetoresistive random access memory (MRAM) cell structure, the method comprising:

• forming an under-metal layer electrically coupled to a switching device, the switching device operated using a read wordline and configured to read a magnetic state of a magnetic tunnel junction (MTJ) stack;
• forming a via structure on and electrically connected to the under-metal layer;
• forming a second via outside of a unit cell, wherein the second via is located in a same metal level as a first via and provides a connection path between a fourth metal layer and a third metal;
• forming a write wordline configured to control the memory state of the memory stack directly and laterally adjacent to the via structure;
• forming a conductive extender having a main portion located over the data control line, and having an extending portion laterally extending over the under-metal layer;
• forming the MTJ stack having a bottom electrode and a top electrode on the main portion of the conductive extender and directly over the data control line;
• wherein the via structure directly connects the extending portion to the under-metal layer, and wherein forming the via structure comprises forming the first via directly connected to the under-metal layer and a third via directly on the first via and connected to the extending portion, wherein a maximum width of the via structure is defined by a width of the first via.