Nonvolatile memory cell and method of manufacturing the same

A transparent nonvolatile memory cell comprising:

• a substrate;
• a first semiconductor layer and a second semiconductor layer on the substrate;
• a first buffer layer on the first semiconductor layer and a second buffer layer on the second semiconductor layer;
• an organic ferroelectric layer on the first buffer layer and a gate insulating layer on the second buffer layer;
• and
• a first gate electrode on the gate insulating layer and a second gate electrode on the organic ferroelectric layer,
• wherein the transparent nonvolatile memory cell includes:
• a transparent memory transistor including the first semiconductor layer, the first buffer layer, the organic ferroelectric layer, and the first gate electrode disposed on the substrate;
• and
• a transparent driver transistor including the second semiconductor layer, the second buffer layer, the gate insulating layer, and the second gate electrode disposed on the substrate;
• a plurality of source and drain electrodes disposed on the substrate at predetermined intervals;
• and
• a plurality of source and drain electrode pads connected to the plurality of source and drain electrodes, respectively,
• wherein the first and second semiconductor layers and the organic ferroelectric layer are disposed on the substrate between the source and drain electrodes to partially cover sidewalls and top surfaces of the source and drain electrodes.