Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials
AssigneeThe Regents of the University of California
InventorsUmesh K. Mishra, Lee S. McCarthy
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Abstract
A method for fabricating an electronic device, comprising wafer bonding a first semiconductor material to a III-nitride semiconductor, at a temperature below 550° C., to form a device quality heterojunction between the first semiconductor material and the III-nitride semiconductor, wherein the first semiconductor material is different from the III-nitride semiconductor and is selected for superior properties, or preferred integration or fabrication characteristics in the injector region as compared to the III-nitride semiconductor.
Claims21
An electronic device, comprising:
- a semiconductor material including an injector region;
- a III-nitride material including a collector region or a drain region;
- and
- a heterojunction formed between the semiconductor material and the III-nitride material, wherein the semiconductor material is not a III-nitride;
- wherein the semiconductor material comprises a material stack including a Si layer and a SiGe layer and the SiGe layer is between the Si layer and the III-nitride material.
An electronic device, comprising:
- a semiconductor material including an injector region;
- a III-nitride material including a collector region or a drain region;
- and
- a heterojunction formed between the semiconductor material and the III-nitride material,
- wherein the semiconductor material is not a III-nitride and the semiconductor material includes a structure comprising n+-type Silicon (Si), p-type Si, and n-type Si and the n-type Si is adjacent to the III-nitride material.
A device, comprising:
- a semiconductor material including an injector region;
- a III-nitride material including a collector region or a drain region;
- and
- a heterojunction formed between the semiconductor material and the III-nitride material, wherein the semiconductor material is not a III-nitride;
- and
- an intermediate material region between the semiconductor material and the III-nitride material, the intermediate material region being selected from the group consisting of In, InP, a III-P compound, and a III-As compound.
Dependencies are inferred from the claim text.