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US 8,558,284 B2Granted
Integrated circuit line with electromigration barriers
AssigneeInternational Business Machines Corporation
InventorsDavid V. Horak, Takeshi Nogami, Shom Ponoth, Chih-Chao Yang
Life of this patent
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Abstract
An integrated circuit comprising an electromigration barrier includes a line, the line comprising a first conductive material, the line further comprising a plurality of line segments separated by one or more electromigration barriers, wherein the one or more electromigration barriers comprise a second conductive material that isolates electromigration effects within individual segments of the line.
Claims19
An integrated circuit comprising an electromigration barrier, comprising:
- a line, the line comprising a first conductive material, the line further comprising a plurality of line segments separated by one or more electromigration barriers, wherein the one or more electromigration barriers comprise a second conductive material that isolates electromigration effects within individual segments of the line, and wherein the line is located within a single wiring layer in a back end of line (BEOL) portion of the integrated circuit.
An integrated circuit comprising an electromigration barrier, comprising:
- a line, the line comprising a first conductive material, the line further comprising a plurality of line segments separated by one or more electromigration barriers, wherein the one or more electromigration barriers comprise a second conductive material that isolates electromigration effects within individual segments of the line;
- and
- wherein the line contacts a via of the integrated circuit, wherein the via extends through a dielectric layer, and wherein each of the plurality of line segments of the line are located directly on the dielectric layer through which the via extends.
Dependencies are inferred from the claim text.