Semiconductor device and method of manufacturing the semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorKen Sato
Life of this patent
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Abstract
A semiconductor device according to the present invention including: a substrate; a compound semiconductor layer formed on the substrate; an element forming area provided in the compound semiconductor layer; and at least one semiconductor element, which includes a first main electrode and a main second electrode, wherein the at least one semiconductor element is formed in the element forming area, wherein the compound semiconductor layer includes: a first compound growth layer, which is formed on the substrate and includes the element forming area; and a second compound growth layer formed on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer.
Claims14
A method of manufacturing a semiconductor device, which comprises:
- a substrate;
- a compound semiconductor layer formed on the substrate;
- an element forming area provided in the compound semiconductor layer;
- and at least one semiconductor element, which includes a first main electrode and a second main electrode, wherein the at least one semiconductor element is formed in the element forming area, the method comprising:
- selectively forming a low crystalline film on the substrate;
- forming a first compound growth layer, which includes the element forming area on the substrate;
- and
- forming a second compound growth layer on the low crystalline film to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer;
- and
- forming at least one semiconductor element in the element forming area
- wherein a low crystalline film is selectively formed between the substrate and the second compound growth layer to surround the element forming area when viewed from the plane.
A method of manufacturing a semiconductor device, which comprises:
- a substrate;
- a compound semiconductor layer formed on the substrate;
- an element forming area provided in the compound semiconductor layer;
- and at least one semiconductor element, which includes a first main electrode and a second main electrode, wherein the at least one semiconductor element is formed in the element forming area, the method comprising:
- forming a first compound growth layer, which includes the element forming area, on the substrate;
- forming a second compound growth layer on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer,
- wherein the forming the second compound growth layer further comprises forming a first area that is to be cut as a dicing area, and forming a second area that is located between the first area and the element forming area;
- and
- cutting the first area.
A semiconductor device comprising:
- a substrate;
- a compound semiconductor layer formed on the substrate;
- an element forming area provided in the compound semiconductor layer;
- and
- at least one semiconductor element, which includes a first main electrode and a second main electrode,
- wherein the at least one semiconductor element is formed in the element forming area,
- wherein the compound semiconductor layer comprises:
- a first compound growth layer, which is formed on the substrate and includes the element forming area;
- and
- a second compound growth layer formed on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer, and
- wherein a low crystalline film is selectively formed between the substrate and the second compound growth layer to surround the element forming area when viewed from the plane.
Dependencies are inferred from the claim text.