Non-planar device having uniaxially strained semiconductor body and method of making same

A method of making a device comprising:

• providing a substrate including a first material;
• providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof, wherein providing the fin includes:
• providing a biaxially strained film including the second material on the substrate;
• and
• removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom;
• wherein a source region and a drain region, included in the fin and including the second material, have greater lattice mismatch with the first material than other regions of the fin.