Semiconductor device and method of providing electrostatic discharge protection for integrated passive devices

A semiconductor device, comprising:

• a substrate;
• an integrated passive device (IPD) susceptible to an electrostatic discharge (ESD) transient and formed over a surface of the substrate;
• a first conductive layer formed over the surface of the substrate and electrically connected to the IPD;
• an ESD protection structure formed over a surface of the first conductive layer
• a first insulating layer formed over the ESD protection structure, IPD, and surface of the substrate;
• and
• a bump or bond wire formed over a surface of the ESD protection structure opposite the first conductive layer and partially exposed from the first insulating layer to provide an ESD path to protect the IPD from the ESD transient.

A semiconductor device, comprising:

• a substrate;
• a circuit structure formed over a surface of the substrate, the circuit structure being susceptible to an electrostatic discharge (ESD) transient;
• a first conductive layer formed over the surface of the substrate and electrically connected to the circuit structure;
• a varistor formed over a surface of the first conductive layer;
• a first insulating layer formed over the varistor and circuit structure;
• and
• an interconnect structure formed over a surface of the varistor opposite the first conductive layer and partially exposed from the first insulating layer to provide an ESD path to protect the circuit structure from the ESD transient.

A semiconductor device, comprising:

• a substrate;
• an integrated passive device (IPD) susceptible to an electrostatic discharge (ESD) transient and formed over a surface of the substrate;
• a conductive layer formed over the surface of the substrate and electrically connected to the IPD;
• a thin film layer formed over a surface of the conductive layer, wherein the thin film layer has a non-linear resistance as a function of a voltage applied to the thin film layer;
• and
• an interconnect structure formed over a surface of the thin film layer opposite the conductive layer and partially exposed to provide an ESD path to protect the IPD from an ESD transient.

A semiconductor device, comprising:

• a substrate including an integrated passive device (IPD) susceptible to an electrostatic discharge (ESD) transient and formed over the substrate;
• an interconnect structure formed over the substrate and electrically connected to the IPD;
• a thin film layer formed over the substrate;
• and
• a first conductive layer formed over the substrate, the thin film layer being electrically connected between the interconnect structure and first conductive layer to provide an ESD path to protect the IPD from the ESD transient;
• wherein the IPD includes:
• an insulating layer formed over the first conductive layer;
• a second conductive layer formed over the insulating layer;
• and
• a third conductive layer formed over the substrate, the third conductive layer being coiled to exhibit inductive properties.

A semiconductor device, comprising:

• a substrate;
• an integrated passive device (IPD) susceptible to an electrostatic discharge (ESD) transient and formed over a surface of the substrate;
• a conductive layer formed over the surface of the substrate and electrically connected to the IPD;
• a thin film layer formed over a surface of the conductive layer;
• and
• an interconnect structure formed over a surface of the thin film layer opposite the conductive layer and partially exposed to provide an ESD path to protect the IPD from an ESD transient, wherein the interconnect structure includes a bump or bond wire.