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US 8,558,274 B2Granted
Light-emitting diode and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJunyoun Kim, Taek Kim, Kyoungkook Kim
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Abstract
A light-emitting diode and a method of manufacturing the light-emitting diode are provide, the light-emitting diode including a lower electrode on a substrate, a template layer on the lower electrode. The template layer may have a plurality of open regions. A plurality of nano-dashes may be formed in the plurality of open regions of the template layer. A transparent insulating layer may be formed between the nano-dashes. A transparent upper electrode may be formed on the nano-dashes and the transparent insulating layer.
Claims16
A light-emitting diode, comprising:
- a lower electrode on a substrate;
- a template layer on the lower electrode, the template layer having a plurality of open regions;
- a plurality of nano-dashes in the plurality of open regions of the template layer;
- a transparent insulating layer between the plurality of nano-dashes;
- and
- a transparent upper electrode on the plurality of nano-dashes and the transparent insulating layer,
- wherein one nano-dash is disposed in each of the open regions of the template layer, each of the nano-dashes has a plurality of nanowires, and side walls of the plurality of nanowires are connected to one another in a straight line.
4 more elements
Dependencies are inferred from the claim text.