Light-emitting device and projector

A light-emitting device comprising:

• a first layer having a first surface;
• a second layer having a second surface that faces the first surface;
• and
• a semiconductor body interposed between the first and second surfaces,
• wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member,
• the first and second fine-wall-shape members having:
• a third layer adjacent to the first surface,
• a fourth layer adjacent to the second surface, and
• a fifth layer interposed between the third and fourth layers,
• the semiconductor member is interposed between the first and second fine-wall-shape members,
• the first and second layers are made of AlGaN,
• the third and fourth layers are made of GaN,
• the fifth layer and the semiconductor member are made of InxGa1-xN (0<x<1),
• a value x of the fifth layer is larger than a value x of the semiconductor member,
• the fifth layer generates and guides light,
• the third and fourth layers guide the light generated in the fifth layer,
• the first and second layers suppress leakage of the light generated in the fifth layer,
• a waveguide through which the light generated in the fifth layer propagates intersects with the first and second fine-wall-shape members as seen in a plan view from a direction normal to the first surface,
• lengths of the first and second fine-wall-shape members in an extending direction of the waveguide are set to λ/2n1, and
• a length of the semiconductor member in an extending direction of the waveguide is set to λ/2n2,
• where λ is a wavelength of the light generated in the fifth layer,
• n1 is an effective refractive index of the first and second fine-wall-shape members, and
• n2 is an effective refractive index of the semiconductor member.

A light-emitting device comprising:

• a first layer;
• a plurality of wall-shape members that has a rectangular shape elongated in an in-plane direction of the first layer and is arranged in a direction perpendicular to the longer direction of the rectangular shape on the first layer;
• a semiconductor member that is made of InxGa1-xN (0<x<1) and provided between the plurality of wall-shape members;
• and
• a second layer disposed on the plurality of wall-shape members and the semiconductor member,
• wherein the wall-shape member includes a first guiding layer, a light-emitting layer, and a second guiding layer sequentially stacked in a direction normal to an in-plane direction of the first layer,
• the light-emitting layer is made of InyGa1-yN (0<x<y<1) and generates light having a wavelength λ,
• the first and second guiding layers guide the light generated in the light-emitting layer in a first direction along an in-plane direction of the first layer,
• the first and second layers suppress leakage of the light generated in the light-emitting layer,
• the first direction intersects with the longer direction of the plurality of wall-shape members,
• a length of the wall-shape member in the first direction is set to λ/2n1, where n1 is an effective refractive index of the wall-shape member, and
• a length of the semiconductor member in the first direction is set to λ/2n2, where n2 is an effective refractive index of the semiconductor member.