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US 8,558,263 B2Granted
Nitride semiconductor light-emitting device having high light efficiency and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSuk-ho Yoon, Cheol-soo Sone
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Abstract
Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.
Claims6
A semiconductor light emitting diode comprising:
- a first semiconductor layer;
- an active layer formed on the first semiconductor layer;
- a second semiconductor layer formed on the active layer:
- a mask layer formed on the second semiconductor layer, the mask layer having a plurality of openings, and having a thickness thinner than that of the second semiconductor layer;
- a third semiconductor layer, having a textured structure on an upper surface thereof, formed on a surface of the second semiconductor layer through the plurality of openings;
- and
- a transparent electrode formed on the third semiconductor layer, having a textured structure on an upper surface thereof, and having a shape which corresponds to that of the textured structure of the third semiconductor layer,
- wherein the first semiconductor layer is an n-type semiconductor layer and the second and third semiconductor layers are p-type semiconductor layers.
5 more elements
Dependencies are inferred from the claim text.