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US 8,558,262 B2Granted
High-reflection submount for light-emitting diode package and fabrication method thereof
AssigneeXintec Inc.
InventorsShang-Yi Wu, Chien-Hui Chen
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AssigneeXintec Inc.
InventorsShang-Yi Wu, Chien-Hui Chen
Estimating the term…
A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.
A silicon submount for LED package, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Optical field-shaping means, e.g. lenses: reflecting means
Mountings; Housings: mount members, e.g. sub-mount members
Means for heat extraction or cooling: characterised by their material
Mountings; Housings: mounting configuration of laser chips
About 4 years 10 months of term left · ends 28 Aug 2031 (estimated)
1. Field of the Invention
The present invention relates generally to light-emitting diode packaging. More particularly, the present invention relates to high-reflection silicon submounts for light-emitting diode packaging and fabrication method thereof.
2. Description of the Prior Art
FIG. 1 to FIG. 6 are schematic, cross-sectional diagrams showing an exemplary method for fabricating a silicon submount for LED packaging in accordance with one preferred embodiment of this invention.
FIG. 7 to FIG. 12 are schematic, cross-sectional diagrams showing an exemplary method for fabricating a silicon submount for LED packaging in accordance with another preferred embodiment of this invention.
FIG. 13 is a schematic, cross-sectional diagram showing an LED package in accordance with another embodiment of this invention.
The invention pertains to a method of fabricating a silicon submount for light emitting device package, which can be incorporated into the wafer level chip scale package (WLCSP) processes. In one embodiment, the light emitting device package structure may be fabricated using a WLCSP process to package a light emitting device, for example, a light emitted diode (LED) or laser diode (LD). The wafer level chip scale package process mentioned above mainly means that after the package process is accomplished during the wafer stage, the wafer with chips is cut to obtain separate independent packages.
However, in an embodiment of the invention, separate independent chips may be redistributed overlying a supporting wafer serving as a carrier and then be packaged, which may also be referred to as a wafer scale package process. In addition, the above mentioned wafer scale package process may also be adapted to form electronic device packages of multi-layer integrated circuit devices by stacking a plurality of wafers having integrated circuits.
It is another technical feature of the invention that the fabrication of the silicon submount incorporates through silicon via (TSV) technology.