Light emitting chip and method for manufacturing the same
AssigneeHon Hai Precision Industry Co., Ltd.
InventorJian-Shihn Tsang
Life of this patent
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Abstract
A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a protective layer formed on the heat conducting layer, a light emitting structure and a connecting layer connecting the protective layer with the light emitting structure. The heat conducting layer includes a plurality of horizontally grown carbon nanotube islands. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer.
Claims4
A light emitting chip comprising:
- a substrate;
- a heat conducting layer formed on the substrate;
- a light emitting structure connected to the heat conducting layer, the light emitting structure comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer;
- and
- a protective layer;
- wherein the heat conducting layer comprises a carbon nanotube layer;
- wherein the protective layer is directly formed on and connected to the carbon nanotube layer, the light emitting structure being connected to the protective layer via a connecting layer;
- wherein the carbon nanotube layer comprises a plurality of discrete islands on the substrate;
- and
- wherein the heat conducting layer comprises a catalyst layer, the catalyst layer has a plurality of areas spaced from each other by multiple gaps.
A method for manufacturing a light emitting chip, comprising steps:
- providing a substrate;
- forming a heat conducting layer on the substrate;
- forming a protective layer;
- and
- connecting a light emitting structure to the heat conducting layer via a connecting layer, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer and a light emitting layer located between the first semiconductor layer and the second semiconductor layer;
- wherein the heat conducting layer comprises a carbon nanotube layer;
- wherein the protective layer is directly formed on and connected to the carbon nanotube layer, the connecting layer being located between the light emitting structure and the protective layer;
- wherein the carbon nanotube layer is grown horizontally and has a plurality of discrete islands located on the substrate;
- and
- wherein the heat conducting layer comprises a catalyst layer, the catalyst layer has a plurality of areas spaced from each other by multiple gaps.
Dependencies are inferred from the claim text.