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US 8,558,260 B2Granted
Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorsBong Cheol Kang, Hyun Kyong Cho
Life of this patent
Estimating the term…
Abstract
Disclosed is a light emitting device. The light emitting device comprises a reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr, and a light emitting semiconductor layer comprising a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer on the reflective layer.
Claims18
A light emitting device comprising:
- a reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr;
- a light emitting semiconductor layer comprising a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer on the reflective layer;
- and
- an anti-diffusion layer between the reflective layer and the light emitting semiconductor layer,
- wherein the light emitting semiconductor layer physically contacts the reflective layer and the anti-diffusion layer,
- wherein the anti-diffusion layer comprises a plurality of portions spaced apart from each other, and
- wherein the reflective layer is disposed between adjacent portions of the anti-diffusion layer.
4 more elements
A light emitting device comprising:
- an anti-oxidation layer comprising at least one of Au, Pt, Rh, TCO or TCN;
- a reflective layer on the anti-oxidation layer, the reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr;
- a light emitting semiconductor layer on the reflective layer;
- and
- an anti-diffusion layer between the reflective layer and the light emitting semiconductor layer,
- wherein the light emitting semiconductor layer physically contacts the reflective layer and the anti-diffusion layer,
- wherein the anti-diffusion layer comprises a plurality of portions spaced apart from each other, and
- wherein the reflective layer is disposed between adjacent portions of the anti-diffusion layer.
5 more elements
A light emitting device comprising:
- an anti-oxidation layer;
- a reflective layer on the anti-oxidation layer, the reflective layer comprising an Ag—Pd—Cu alloy containing at least Ag, Pd and Cu;
- a light emitting semiconductor layer on the reflective layer;
- and
- an anti-diffusion layer between the reflective layer and the light emitting semiconductor layer,
- wherein the light emitting semiconductor layer physically contacts the reflective layer and the anti-diffusion layer,
- wherein the anti-diffusion layer comprises a plurality of portions spaced apart from each other, and
- wherein the reflective layer is disposed between adjacent portions of the anti-diffusion layer.
5 more elements
Dependencies are inferred from the claim text.