US 8,558,258 B2 · Nitride semiconductor light emitting device and fabrication method thereof

Abstract

The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.

Claims14

Dependent claims

A light emitting device comprising:

a substrate having a plurality of patterns;
a first conductive semiconductor layer on a buffer layer, wherein the first conductive semiconductor layer includes first to third GaN-based layers, wherein the first GaN-based layer includes Si dopant, the second Ga-based layer includes a dopant having a lower concentration of Si than the first GaN-based layer, and the third GaN-based layer includes In material, wherein the first conductive semiconductor layer further comprises a fourth GaN-based layer including Al material, and wherein the fourth GaN-based layer has a planar surface;
an active layer on the third GaN-based layer of the first conductive semiconductor layer, wherein the active layer comprises a single quantum well layer or a multi quantum well layer of InxGa1-xN/InyGa1-yN;
and
a second conductive semiconductor layer on the active layer.

2 more elements

Dependencies are inferred from the claim text.

Nitride semiconductor light emitting device and fabrication method thereof

Life of this patent

Nitride semiconductor light emitting device and fabrication method thereof

Life of this patent

Abstract

Claims14