Coupled asymmetric quantum confinement structures

A coupled asymmetric quantum confinement structure operable to delay an optical signal, the coupled asymmetric quantum confinement structure comprising:

• a first quantum confinement structure comprising a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a first gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the first gate electrode being configured to deliver a first gate voltage;
• and
• a second quantum confinement structure coupled in series with the first quantum confinement structure, the second quantum confinement structure comprising a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a second gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the second gate being configured to deliver a second gate voltage, wherein the second quantum confinement structure comprises at least one asymmetric semiconductor material as compared to the first quantum confinement structure,
• wherein the coupled first and second quantum confinement structures delay the optical signal by quantum confinement of the optical signal at the first quantum confinement structure in response to the first gate voltage or at the second quantum confinement structure in response to the second gate voltage.

A coupled asymmetric quantum confinement structure operable to delay an optical signal, the coupled asymmetric quantum confinement structure comprising:

• a first quantum confinement structure comprising a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a first gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the first gate electrode being configured to deliver a first gate voltage;
• and
• a second quantum confinement structure comprising a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a second gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the second gate being configured to deliver a second gate voltage, the second quantum confinement structure being coupled in series with the first quantum confinement structure, wherein the second gate voltage is asymmetric as compared to the first gate voltage,
• wherein the coupled first and second quantum confinement structures delay the optical signal by quantum confinement of the optical signal at the first quantum confinement structure in response to the first gate voltage or at the second quantum confinement structure in response to the second gate voltage.