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US 8,558,256 B2Granted
Light emitting diode using semiconductor nanowire and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-ha Hong, Young-gu Jin, Jai-kwang Shin, Sung-Il Park, Jong-seob Kim
Life of this patent
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Abstract
Provided are a light emitting diode (LED) using a Si nanowire as an emission device and a method of fabricating the same. The LED includes: a semiconductor substrate; first and second semiconductor protrusions disposed on the semiconductor substrate to face each other; a semiconductor nanowire suspended between the first and second semiconductor protrusions; and first and second electrodes disposed on the first and second protrusions, respectively.
Claims10
A light emitting diode (LED) comprising:
- a semiconductor substrate;
- first and second semiconductor protrusions disposed on the semiconductor substrate to face each other;
- a semiconductor nanowire suspended between the first and second semiconductor protrusions;
- and
- first and second electrodes disposed on the first and second protrusions, respectively, the first electrode being flush with a first top edge of the first semiconductor protrusion that is farthest from the semiconductor nanowire, and the second electrode being flush with a second top edge of the second semiconductor protrusion that is farthest from the semiconductor nanowire,
- wherein the first semiconductor protrusion, the semiconductor nanowire, and the second semiconductor protrusion are part of a monolithic body, and
- wherein the semiconductor nanowire is in the form of a plurality of semiconductor nanowires arranged between the first and second semiconductor protrusions, the plurality of semiconductor nanowires having different diameters ranging from 1.5 nm to 5 nm.
4 more elements
A light emitting diode (LED) comprising:
- a semiconductor substrate;
- first and second semiconductor protrusions disposed on the semiconductor substrate to face each other;
- a sacrificial layer disposed between the semiconductor substrate and the first and second semiconductor protrusions;
- a semiconductor nanowire suspended between the first and second semiconductor protrusions;
- and
- first and second electrodes disposed on the first and second protrusions, respectively, the first electrode being flush with a first top edge of the first semiconductor protrusion that is farthest from the semiconductor nanowire, and the second electrode being flush with a second top edge of the second semiconductor protrusion that is farthest from the semiconductor nanowire,
- wherein the semiconductor nanowire is in the form of a plurality of semiconductor nanowires arranged between the first and second semiconductor protrusions, the plurality of semiconductor nanowires having different diameters ranging from 1.5 nm to 5 nm.
4 more elements
A light emitting diode (LED) comprising:
- a semiconductor substrate;
- first and second semiconductor protrusions disposed on the semiconductor substrate to face each other;
- a semiconductor nanowire suspended between the first and second semiconductor protrusions;
- and
- first and second electrodes disposed on the first and second protrusions, respectively, the first electrode being flush with a first top edge of the first semiconductor protrusion that is farthest from the semiconductor nanowire, and the second electrode being flush with a second top edge of the second semiconductor protrusion that is farthest from the semiconductor nanowire,
- wherein the first and second semiconductor protrusions are disposed between the first and second electrodes and the semiconductor substrate, the first and second electrodes being smaller than the first and second semiconductor protrusions, and
- wherein the semiconductor nanowire is in the form of a plurality of semiconductor nanowires arranged between the first and second semiconductor protrusions, the plurality of semiconductor nanowires having different diameters ranging from 1.5 nm to 5 nm.
4 more elements
Dependencies are inferred from the claim text.