Semiconductor device and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsNaoko Yanase, Shingo Masuko, Takaaki Yasumoto, Ryoichi Ohara, Yorito Kakiuchi, Takao Noda, Kenya Sano
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Abstract
According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.
Claims9
A semiconductor device comprising:
- a SiC layer of a first conductivity type having a hexagonal crystal structure;
- a first semiconductor region of a second conductivity type provided in a surface of the SiC layer;
- a second semiconductor region of the first conductivity type selectively provided in a surface of the first semiconductor region;
- a third semiconductor region of the second conductivity type selectively provided in the surface of the first semiconductor region adjacent to the second semiconductor region;
- a first conductive layer of the first conductivity type provided on the second semiconductor region;
- and
- a second conductive layer of the second conductivity type provided on the third semiconductor region,
- the second semiconductor region including SiC of a cubic crystal structure in a portion in contact with the first conductive layer in a case where the first conductivity type is P-type, and
- the third semiconductor region including SiC of a cubic crystal structure in a portion in contact with the second conductive layer in a case where the second conductivity type is P-type.
Dependencies are inferred from the claim text.