Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTomoaki Atsumi, Hiroki Inoue
Life of this patent
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Abstract
In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.
Claims18
A semiconductor device comprising:
- a capacitor portion including a plurality of blocks each including a plurality of capacitor elements, a first wiring, and a second wiring,
- wherein each of the plurality of capacitor elements includes a semiconductor film having a first impurity region and a plurality of second impurity regions provided with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween,
- wherein the first impurity region comprises one conductivity type impurity element,
- wherein each of the second impurity regions comprises another conductivity type impurity element,
- wherein the conductive film is electrically connected to the first wiring,
- wherein the second wiring has a shape including a plurality of loops,
- wherein each of the plurality of blocks comprises a unit comprising:
- one of the plurality of loops;
- and
- a set of some of the plurality of capacitor elements,
- wherein all of the first impurity regions of the set of the capacitor elements are surrounded by the one of the plurality of loops,
- wherein all of the second impurity regions of the set of the capacitor elements are electrically connected to the one of the plurality of loops, and
- wherein the plurality of capacitor elements are connected in parallel with each other.
A semiconductor device comprising:
- a capacitor portion including a plurality of blocks each including a plurality of capacitor elements, a first wiring, and a second wiring,
- wherein each of the plurality of capacitor elements includes a semiconductor film having a first impurity region and a plurality of second impurity regions provided with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween,
- wherein the first impurity region comprises one conductivity type impurity element,
- wherein each of the second impurity regions comprises another conductivity type impurity element,
- wherein the conductive films provided in the plurality of capacitor elements are connected to each other through the first wiring,
- wherein the second wiring has a shape including a plurality of loops,
- wherein each of the plurality of blocks comprises a unit comprising:
- one of the plurality of loops;
- and
- a set of some of the plurality of capacitor elements,
- wherein all of the first impurity regions of the set of the capacitor elements are surrounded by the one of the plurality of loops,
- wherein all of the second impurity regions of the set of the capacitor elements are electrically connected to the one of the plurality of loops, and
- wherein the second impurity regions provided in the plurality of capacitor elements are electrically connected to each other through the second wiring.
Dependencies are inferred from the claim text.