Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
AssigneeSanDisk 3D LLC
InventorsApril Schricker, Mark Clark, Brad Herner
Life of this patent
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Abstract
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
Claims51
A method of fabricating a memory cell, the method comprising:
- fabricating a first conductor above a substrate;
- selectively fabricating a reversible resistance-switching carbon nano-tube (CNT) material above the first conductor;
- fabricating a diode in series with the CNT material;
- and
- fabricating a second conductor above the diode.
A method of fabricating a memory cell, the method comprising:
- fabricating a first conductor above a substrate;
- fabricating a reversible resistance-switching carbon nano-tube (CNT) material above the first conductor;
- fabricating a vertical polycrystalline diode in series with the reversible resistance-switching CNT material;
- and
- fabricating a second conductor above the vertical polycrystalline diode.
A memory cell comprising:
- a first conductor;
- a reversible resistance-switching carbon nano-tube (CNT) material selectively fabricated above the first conductor;
- a diode formed in series with the reversible resistance-switching CNT material;
- and
- a second conductor formed above the diode.
A plurality of nonvolatile memory cells comprising:
- a first plurality of substantially parallel, substantially coplanar conductors extending in a first direction;
- a plurality of diodes;
- a plurality of reversible resistance-switching elements;
- and
- a second plurality of substantially parallel, substantially coplanar conductors extending in a second direction different from the first direction;
- wherein, in each memory cell, one of the diodes is formed in series with one of the reversible resistance-switching elements, disposed between one of the first conductors and one of the second conductors;
- and
- wherein each reversible resistance-switching element includes selectively fabricated reversible resistance-switching carbon nano-tube (CNT) material formed above one of the first conductors.
A monolithic three dimensional memory array comprising:
- a first memory level formed above a substrate, the first memory level comprising:
- a plurality of memory cells, wherein each memory cell of the first memory level comprises:
- a first conductor;
- a reversible resistance-switching carbon nano-tube (CNT) material selectively fabricated above the first conductor;
- a diode formed in series with the reversible resistance-switching CNT material;
- and
- a second conductor formed above the diode;
- and
- at least a second memory level monolithically formed above the first memory level.
Dependencies are inferred from the claim text.