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US 8,558,218 B2Granted
Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivites and structures formed thereby
AssigneeIntel Corporation
InventorsNachiket Raravikar, Daewoong Suh, Chris Matayabas
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Abstract
Methods and associated structures of forming microelectronic devices are described. Those methods may include method of forming a layered nanotube structure comprising a wetting layer disposed on a nanotube, a Shottky layer disposed on the wetting layer, a barrier layer disposed on the Shottky layer, and a matrix layer disposed on the barrier layer.
Claims6
A method of forming a layered nanotube structure comprising:
- forming a carbon containing layer on a nanotube;
- forming a carbide forming layer on the carbon containing layer;
- forming a matrix reacting layer on the carbide forming layer;
- and
- forming a matrix layer on the matrix reacting layer.
2 more elements
A layered nanotube structure comprising:
- a carbon containing layer on a nanotube wherein the carbon containing layer comprises at least one of carbon black, activated carbon and amorphous carbon;
- a carbide forming layer disposed on the carbon containing layer wherein the carbide forming layer comprises at least one of tungsten, nickel, titanium and tantalum;
- a matrix reacting layer disposed on the carbide forming layer;
- and
- a matrix layer disposed on the matrix reacting layer wherein the matrix layer comprises a metal containing matrix.
2 more elements
A layered nanotube structure comprising:
- a carbon containing layer on a nanotube;
- a carbide forming layer disposed on the carbon containing layer;
- a matrix reacting layer disposed on the carbide forming layer;
- and
- a matrix layer disposed on the matrix reacting layer wherein the layered nanotube structure comprises an interfacial thermal resistance below about 0.05° C.-cm2/W.
2 more elements
Dependencies are inferred from the claim text.