Light emitting diode
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYang Wei, Shou-Shan Fan
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Abstract
A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
Claims20
A light emitting diode comprising:
- a substrate;
- a first semiconductor layer stacked on the substrate, wherein the first semiconductor layer comprises an intrinsic semiconductor layer and a doped semiconductor layer stacked with the intrinsic semiconductor layer;
- an active layer stacked on the first semiconductor layer;
- a second semiconductor layer stacked on the active layer;
- a first electrode electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the second semiconductor layer;
- and
- a carbon nanotube layer disposed between the first semiconductor layer and the substrate;
- wherein the substrate has an epitaxial growth surface, and the carbon nanotube layer is a free-standing structure directly disposed on the epitaxial growth surface of the substrate.
A light emitting diode comprising:
- a substrate;
- a first semiconductor layer stacked on the substrate, wherein the first semiconductor layer comprises an intrinsic semiconductor layer and a doped semiconductor layer stacked with the intrinsic semiconductor layer;
- an active layer stacked on the first semiconductor layer;
- a second semiconductor layer stacked on the active layer;
- a first electrode electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the second semiconductor layer;
- and
- a carbon nanotube layer disposed between the first semiconductor layer and the substrate,
- wherein the carbon nanotube layer defines a plurality of apertures, and the intrinsic semiconductor layer of the first semiconductor layer penetrates through the apertures and contacts the substrate.
A light emitting diode comprising:
- a substrate;
- a first semiconductor layer stacked on the substrate, wherein the first semiconductor layer comprises an intrinsic semiconductor layer and a doped semiconductor layer stacked with the intrinsic semiconductor layer, and a patterned depression is defined in the intrinsic semiconductor layer;
- an active layer stacked on the first semiconductor layer;
- a second semiconductor layer stacked on the active layer;
- a first electrode electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the second semiconductor layer;
- and
- a carbon nanotube layer disposed in the patterned depression;
- wherein the patterned depression is covered by the substrate and a plurality of channels are formed between the first semiconductor layer and the substrate.
Dependencies are inferred from the claim text.