Conductive path in switching material in a resistive random access memory device and control
AssigneeCrossbar, Inc.
InventorSung Hyun Jo
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Abstract
A non-volatile memory device structure. The device structure includes a first electrode, a second electrode, a resistive switching material comprising an amorphous silicon material overlying the first electrode, and a thickness of dielectric material having a thickness ranging from 5 nm to 10 nm disposed between the second electrode and the resistive switching layer. The thickness of dielectric material is configured to electrically breakdown in a region upon application of an electroforming voltage to the second electrode. The electrical breakdown allows for a metal region having a dimension of less than about 10 nm by 10 nm to form in a portion of the resistive switching material.
Claims20
A non-volatile memory device comprising:
- a first electrode;
- a second electrode comprising a metal material;
- a resistive switching material comprising an amorphous silicon material overlying the first electrode;
- and
- a dielectric material formed between the second electrode and the resistive switching layer, wherein the dielectric material initially completely separates the second electrode and the resistive switching layer, wherein the dielectric material has a thickness configured to electrically breakdown in a region when a first voltage is applied to the second electrode, and wherein the region allows a first metal region characterized by a first diameter to form therein and extend in a portion of the resistive switching material from the metal material.
Dependencies are inferred from the claim text.