Charged particle lithography system with aperture array cooling

A charged particle lithography system for transferring a pattern onto the surface of a target, comprising:

• a beam generator for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column;
• a plurality of aperture array elements comprising a first aperture array, a blanker array, a beam stop array, and a projection lens array;
• wherein each aperture array element comprises a plurality of apertures arranged in a plurality of groups, the apertures for letting the beamlets pass through the aperture array element;
• wherein the groups of apertures of each aperture array element form beam areas distinct and separate from a plurality of non-beam areas formed between the beam areas and containing no apertures for passage of the beamlets;
• wherein the beam areas of the aperture array elements are aligned to form beam shafts, each comprising a plurality of beamlets, and the non-beam areas of the aperture array elements are aligned to form non-beam shafts not having beamlets present therein;
• and
• wherein the first aperture array element is provided with cooling channels adapted for transmission of a cooling medium for cooling the first aperture array element, the cooling channels being provided in the non-beam areas of the first aperture array element.