Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorYusuke Hirayama
Life of this patent
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Abstract
A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.
Claims16
A plasma processing apparatus comprising:
- a processing chamber;
- a mounting table positioned in the processing chamber for mounting thereon a substrate to be processed;
- a local plasma generator positioned in the processing chamber, said local plasma generator including a local plasma generating chamber configured to generate a plasma therein, and an outlet which faces the mounting table such that plasma generated within the local plasma generator exits the outlet toward the mounting table to locally react on the substrate to be processed;
- a moving unit for moving the local plasma generator, wherein the local plasma generator includes an offset gas discharge mechanism positioned outside of the local plasma generating chamber and around a perimeter of the outlet, wherein the offset gas discharge mechanism is configured to discharge an offset gas along a perimeter of the outlet of the local plasma generator to localize reaction of the plasma discharged from the outlet of the local plasma generator;
- wherein a processing gas which forms the plasma is an etching gas, and the offset gas is a deposition gas;
- and
- wherein the deposition gas is a CHF-based deposition gas when the etching gas is a F-based etching gas, the deposition gas is a CF-based or a HBr-based deposition gas when the etching gas is a Cl-based etching gas, and the deposition gas is a CF-based deposition gas when the etching gas is a 02-based etching gas.
A plasma processing method for plasma processing an entire surface of a substrate to be processed by repeatedly performing a process for allowing a plasma of a processing gas to locally react on the substrate until the entire surface of the substrate is processed by the plasma with the use of a local plasma generator disposed to face a mounting table for mounting thereon the substrate to be processed in an airtight processing chamber, wherein the local plasma generator is disposed within the processing chamber and includes a local plasma generating chamber which is configured to generate a plasma therein, and an outlet facing the mounting table, the method comprising:
- generating a plasma within the local plasma generating chamber of the local plasma generator within the processing chamber, and flowing the plasma out of the outlet of the local plasma generator toward a substrate on the mounting table;
- discharging an offset gas along a perimeter of the outlet of the local plasma generator, which localizes reaction of the plasma, to a boundary region which surrounds a region through which the plasma is discharged from the outlet of the local plasma generator into the processing chamber and toward the substrate;
- wherein a processing gas which forms the plasma is an etching gas, and the offset gas is a deposition gas;
- and
- wherein the deposition gas is a CHF-based deposition gas when the etching gas is a F-based etching gas, the deposition gas is a CF-based or a HBr-based deposition gas when the etching gas is a Cl-based etching gas, and the deposition gas is a CF-based deposition gas when the etching gas is a 02-based etching gas.
Dependencies are inferred from the claim text.