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US 8,557,724 B2Granted
Semiconductor porcelain composition and method of producing the same
AssigneeHitachi Metals, Ltd.
InventorsTakeshi Shimada, Koichi Terao, Kazuya Toji
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AssigneeHitachi Metals, Ltd.
InventorsTakeshi Shimada, Koichi Terao, Kazuya Toji
Estimating the term…
A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.
A semiconductor porcelain composition obtained by forming and sintering, without further heat treatment, a mixed calcined powder of a calcined powder of (BaR)TiO3 (wherein R is a semiconductive dopant and is at least one kind selected from La, Dy, Eu, Gd and Y) and a calcined powder of (BiNa)TiO3,
Dependencies are inferred from the claim text.