Method for blister-free passivation of a silicon surface
AssigneesImec, Katholieke Universiteit Leuven
InventorBart Vermang
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Abstract
A method of forming a surface passivation layer on a surface of a crystalline silicon substrate is disclosed. In one aspect, the method includes depositing an Al2O3 layer on the surface, the Al2O3 layer having a thickness not exceeding about 15 nm; performing an outgassing process at a temperature in the range between about 500° C. and 900° C., after the deposition of the Al2O3 layer on the surface; and after the outgassing process, depositing at least one additional dielectric layer such as a silicon nitride layer and/or a silicon oxide layer on the Al2O3 layer.
Claims17
A method of forming a surface passivation layer on a surface of a crystalline silicon substrate, the method comprising:
- depositing an Al2O3 layer on the surface, the Al2O3 layer having a thickness not exceeding about 15 nm;
- performing an outgassing process at a temperature in the range between about 500° C. and 900° C., after the deposition of the Al2O3 layer on the surface;
- and
- after the outgassing process, depositing at least one additional dielectric layer on the Al2O3 layer.
A method of forming a surface passivation layer on a surface of a crystalline silicon substrate, the method comprising:
- depositing an Al2O3 layer on the surface, the Al2O3 layer having a thickness not exceeding 15 nm;
- performing an outgassing process at a temperature in the range between 500° C. and 900° C.;
- and
- depositing a dielectric layer on the Al2O3 layer.
Dependencies are inferred from the claim text.