Back to results
US 8,557,714 B2Granted
Adhesiveness of fluorocarbon (CFX) film by doping of amorphous carbon
AssigneeTokyo Electron Limited
InventorYoshiyuki Kikuchi
Life of this patent
Estimating the term…
Abstract
A method of forming an amorphous carbon layer on an insulating layer includes the step of forming an amorphous carbon layer using a plasma reaction process. The amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a CxHy series gas, a silicon-containing gas, and an oxygen-containing gas.
Claims20
A method of forming an amorphous carbon layer on an insulating layer, the method comprising the step of:
- forming an amorphous carbon layer using a plasma reaction process, wherein the amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a CxHy series gas, a silicon-containing gas, and an oxygen-containing gas.
A method for manufacturing a semiconductor device having an amorphous carbon layer as a barrier layer, the method comprising the steps of:
- forming a fluorocarbon (CFx) layer over a substrate;
- forming an amorphous carbon layer on the fluorocarbon (CFx) layer using a plasma reaction process, wherein the amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a CxHy series gas, a silicon-containing gas, and an oxygen-containing gas.
Dependencies are inferred from the claim text.