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US 8,557,713 B2Granted
Semiconductor devices and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHa-Jin Lim, Hyung-Suk Jung, Yun-Ki Choi
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Abstract
Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer.
Claims19
A method of forming a semiconductor device, comprising:
- forming a first dielectric layer on a substrate;
- forming a second dielectric layer on the first dielectric layer;
- and
- forming a third dielectric layer on the second dielectric layer,
- wherein a carbon concentration in the first dielectric layer and the third dielectric layer is lower than a carbon concentration in the second dielectric layer, and
- a region in the first dielectric layer adjacent to the substrate has the lowest carbon concentration.
3 more elements
Dependencies are inferred from the claim text.