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US 8,557,710 B2Granted
Gas cluster ion beam etching process for metal-containing materials
AssigneeTEL Epion Inc.
InventorsYan Shao, Martin D. Tabat, Christopher K. Olsen, Ruairidh Maccrimmon
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Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
Claims6
A method for etching metal-containing material on a substrate, comprising:
- maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface;
- holding said substrate securely within said reduced-pressure environment;
- forming a gas cluster ion beam (GCIB) from a pressurized gas comprising an etching gas that includes a mono-substituted halomethane, a di-substituted halomethane, a tri-substituted halomethane, or a tetra-substituted halomethane substituted with two different halogen elements, or any combination of two or more thereof;
- accelerating said GCIB through said reduced-pressure environment;
- and
- irradiating said accelerated GCIB onto at least a portion of said surface of said substrate to etch a metal-containing material on said substrate,
- wherein said metal-containing material includes a transition or post-transition metal.
4 more elements
Dependencies are inferred from the claim text.