Focused ion beam deep nano-patterning apparatus and method

A method of focused ion beam deep nano-patterning comprising:

• depositing a protective layer over a semiconductor substrate;
• creating at least one opening in said protective layer by directing a focused ion beam onto said protective layer;
• and
• creating a deep nano-pattern in said substrate by directing a focused ion beam onto said protective layer,
• wherein sputtering rate by said focused ion beam of said protective layer is slower than said substrate,
• wherein said creating at least one opening in said protective layer and said creating a deep nano-pattern in said substrate are performed using the same focused ion beam technology, and
• wherein the substrate is selected from a group comprising Titanium and Titanium Oxide.

A method of focused ion beam deep nano-patterning comprising:

• depositing a protective layer over a semiconductor substrate;
• creating at least one opening in said protective layer by directing a focused ion beam onto said protective layer;
• and
• creating a deep nano-pattern in said substrate by directing a focused ion beam onto said protective layer, wherein sputtering rate by said focused ion beam of said protective layer is slower than said substrate,
• depositing conductive material in the deep nano-pattern that was created;
• wherein said creating at least one opening in said protective layer and said creating a deep nano-pattern in said substrate are performed using the same focused ion beam technology,
• wherein said substrate is a VLSI electronic circuit,
• wherein said depositing conductive material in the deep nano-pattern that was created comprises creating a new electronic connection between two adjacent features within said VLSI.

A method of focused ion beam deep nano-patterning comprising:

• depositing a protective layer over a semiconductor substrate;
• creating at least one opening in said protective layer by directing a focused ion beam onto said protective layer;
• and
• creating a deep nano-pattern in said substrate by directing a focused ion beam onto said protective layer, wherein sputtering rate by said focused ion beam of said protective layer is slower than said substrate,
• depositing conductive material in the deep nano-pattern that was created;
• wherein said creating at least one opening in said protective layer and said creating a deep nano-pattern in said substrate are performed using the same focused ion beam technology,
• wherein said substrate is a VLSI electronic circuit,
• wherein depositing conductive material in the deep nano-pattern that was created comprises creating electric connection between adjacent features within said VLSI and a test pad on the surface of said substrate.

A method of focused ion beam deep nano-patterning comprising:

• depositing a protective layer over a semiconductor substrate;
• creating a deep nano-pattern in said substrate by directing a focused ion beam onto said protective layer, wherein sputtering rate by said focused ion beam of said protective layer is slower than said substrate;
• and
• oxidizing said protective layer before said creating a deep nano-pattern.