Substrate processing method
AssigneeTokyo Electron Limited
InventorsMasanobu Honda, Hironobu Ichikawa
Life of this patent
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Abstract
A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.
Claims9
A substrate processing method that processes a substrate in which a to-be-processed layer, an intermediate layer, and a mask layer are stacked in this order, and in which the mask layer has an opening to which part of the intermediate layer is exposed, comprising:
- an opening width reducing step comprising accumulating deposit on a side wall surface of the opening in the mask layer using plasma produced from a deposition gas alone having a gas attachment coefficient S of 0.1 to 1.0, thus reducing an opening width of the opening, and
- an intermediate layer etching step of transferring the opening, the opening width of which is reduced in said opening width reducing step, onto the intermediate layer using plasma produced from a mixed gas comprising the deposition gas and an etching gas,
- wherein in said intermediate layer etching step, no bias electric power is applied to the substrate.
Dependencies are inferred from the claim text.