Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi Hizawa, Nobuhide Yamada, Yoshihiro Ogawa, Masahiro Kiyotoshi
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Abstract
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.
Claims17
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure, comprising:
- cleaning etch residues residing between the etched patterns by a first chemical liquid;
- rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid;
- and
- coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film;
- wherein the cleaning of the etch residues to the coating of the workpiece structure are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure, comprising:
- cleaning etch residues residing between the etched patterns by a first chemical liquid;
- rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid;
- supplying a second chemical liquid to the workpiece structure after the rinsing and substituting the rinse liquid remaining between the patterns with the second chemical liquid;
- and
- coating the workpiece structure with a coating liquid for formation of the insulating film after substituting the rinse liquid remaining between the patterns with the second chemical liquid;
- wherein the cleaning of the etch residues to the coating of the workpiece structure are carried out such that a liquid constantly exists between the patterns of the workpiece structure, and wherein NOH/NCH of the second chemical liquid is less than NOH/NCH of the rinse liquid but is greater than NOH/NCH of the coating liquid, where NCH represents a number of CH groups within a single molecule and NOH represents a number of OH groups within a single molecule.
Dependencies are inferred from the claim text.